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DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temp.
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
100% UIS and R g Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.072 grams (approximate)
Q1
Q2
D iodes Schottky I ntegrated M O S FET
D2
G2
D 1
D 2
D2
S2/D1
G1
S1
Top View
S2/D1
S2/D1
G 1
S 1
G 2
S 2
Top View
Internal Schematic
N-Channel MOSFET
N-Channel MOSFET
Maximum Ratings – Q1 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Unit
V
V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
9.5
7.2
A
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I DM
I AR
E AR
40
13
25.4
A
A
mJ
Maximum Ratings – Q2 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Unit
V
V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
9.5
7.5
A
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
I DM
I AR
E AR
40
13
25.4
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
1.19
107
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
? Diodes Incorporated
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